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MWI 15-12A7
IGBTs
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
1200
±20
±30
30
20
140
Unit
V
V
V
A
A
W
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 15 A; V GE = 15 V
I C = 0.6 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
4.5
2.0
2.3
0.8
2.6
6.5
0.9
V
V
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V CE = 0 V; V GE = ±20 V
V CE = 25 V; V GE = 0 V; F = 1 MHZ
V CE = 600 V; V GE = 15 V; I C = 15 A
1000
70
200
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
INDUCTIVE LOAD
V CE = 600 V; I C = 15 A
V GE = ±15 V; R G = 82 W
T VJ = 125°C
100
75
500
70
2.3
1.8
ns
ns
ns
ns
mJ
mJ
I CM
reverse bias safe operating area
RBSOA; V GE = ±15 V; R G = 82 W
L = 100 μH; clamped induct. load T VJ = 125°C
V CEmax = V CES - L S · di/dt
35
A
t SC
(SCSOA)
R thJC
short circuit safe operating area
thermal resistance junction to case
V CE = V CES ; V GE = ±15 V;
R G = 82 W ; non-repetitive
(PER IGBT)
T VJ = 125°C
10
0.88
μS
K/W
Diodes
Ratings
Symbol
V RRM
I F25
I F80
V F
I RM
t rr
E rec(off)
R thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
I F = 15 A; V GE = 0 V
V R = 600 V
di F /DT = -400 A/μS
I F = 15 A; V GE = 0 V
(per diode)
T VJ = 150°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 125°C
min.
typ.
2.4
1.7
16
130
0.49
max.
1200
25
17
2.7
2.1
Unit
V
A
A
V
V
A
ns
mJ
K/W
T C = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
20080805a
2-6
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